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The Packaging Research Center (PRC) at Georgia Tech has been exploring and evaluating novel compliant nano interconnect designs to enable high density I/O architecture for the next generation chip assembly. Most of the compliant i...
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The Packaging Research Center (PRC) at Georgia Tech has been exploring and evaluating novel compliant nano interconnect designs to enable high density I/O architecture for the next generation chip assembly. Most of the compliant interconnects that are currently being developed have inductance and resistance higher than desirable. We propose high aspect ratio interconnects as a solution that can support both electrical and mechanical requirements. The fabrication of these interconnects is similar to the standard IC fabrication and involves only one additional step beyond the standard CMOS wafer processing, thus making it a cost effective wafer level process. Extensive modeling was carried out to design 40 /spl mu/m pitch interconnects with optimized electrical and mechanical properties. The fabrication of fine-pitch copper interconnects with aspect ratio of 1:5 was demonstrated as a low-cost wafer level process. Results show that these interconnects provide the optimal combination of electrical and mechanical requirements and hence provides a viable solution for next-generation electronic packaging that can support extremely high I/O density.
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This paper presents an analytical model of power/ground noise coupling to signal traces in high-speed multi-layer systems. The coupling model is expressed in terms of transfer impedance which denotes the coupled noise voltage at t...
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This paper presents an analytical model of power/ground noise coupling to signal traces in high-speed multi-layer systems. The coupling model is expressed in terms of transfer impedance which denotes the coupled noise voltage at the signal trace when switching current occurs. This model is then compared with measured data and full-wave simulated data up to 10 GHz to verify the validity of the model. The results calculated by the proposed model shows good correlation with measurement.
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摘要 :
This paper presents an analytical model of power/ground noise coupling to signal traces in high-speed multi-layer systems. The coupling model is expressed in terms of transfer impedance which denotes the coupled noise voltage at t...
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This paper presents an analytical model of power/ground noise coupling to signal traces in high-speed multi-layer systems. The coupling model is expressed in terms of transfer impedance which denotes the coupled noise voltage at the signal trace when switching current occurs. This model is then compared with measured data and full-wave simulated data up to 10 GHz to verify the validity of the model. The results calculated by the proposed model shows good correlation with measurement.
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A test structure for analysis of temperature distributions and effects of metal wires on thermal properties in stacked IC is presented. The effects on the temperature distributions and transient phenomena in the single die and the...
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A test structure for analysis of temperature distributions and effects of metal wires on thermal properties in stacked IC is presented. The effects on the temperature distributions and transient phenomena in the single die and the stacked ICs were analyzed. The heat transfer in the metal wires affects the temperature distributions, which are consistent with the thermal simulation results. The test structure can provide an effective way for analysis of thermal properties in various LSIs.
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摘要 :
A test structure for analysis of temperature distributions and effects of metal wires on thermal properties in stacked IC is presented. The effects on the temperature distributions and transient phenomena in the single die and the...
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A test structure for analysis of temperature distributions and effects of metal wires on thermal properties in stacked IC is presented. The effects on the temperature distributions and transient phenomena in the single die and the stacked ICs were analyzed. The heat transfer in the metal wires affects the temperature distributions, which are consistent with the thermal simulation results. The test structure can provide an effective way for analysis of thermal properties in various LSIs.
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Very low power loss /spl les/0.6 dB at 110 GHz and noise of >0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and highe...
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Very low power loss /spl les/0.6 dB at 110 GHz and noise of >0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of /spl sim/ 4 MeV for easier process integration into current VLSI technology.
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摘要 :
Very low power loss /spl les/0.6 dB at 110 GHz and noise of >0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and highe...
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Very low power loss /spl les/0.6 dB at 110 GHz and noise of >0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of /spl sim/ 4 MeV for easier process integration into current VLSI technology.
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This paper describes the challenges of designing RF integrated circuits using the advanced RFCMOS technology. Following an overview of the RFCMOS process, design challenges for low cost, high performance RFICs and their integratio...
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This paper describes the challenges of designing RF integrated circuits using the advanced RFCMOS technology. Following an overview of the RFCMOS process, design challenges for low cost, high performance RFICs and their integration issues are discussed. Discussions show that these challenges can be addressed through innovative circuit and system design, technology enhancement, accurate model support and close collaboration among designers and technology providers.
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摘要 :
This paper describes the challenges of designing RF integrated circuits using the advanced RFCMOS technology. Following an overview of the RFCMOS process, design challenges for low cost, high performance RFICs and their integratio...
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This paper describes the challenges of designing RF integrated circuits using the advanced RFCMOS technology. Following an overview of the RFCMOS process, design challenges for low cost, high performance RFICs and their integration issues are discussed. Discussions show that these challenges can be addressed through innovative circuit and system design, technology enhancement, accurate model support and close collaboration among designers and technology providers.
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This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC receiver suitable for 40 Gbps data transmission rates. The circuit was implemented on a MMIC PH15 process from United Monolithic Semi...
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This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC receiver suitable for 40 Gbps data transmission rates. The circuit was implemented on a MMIC PH15 process from United Monolithic Semiconductors (UMS). This process features 0.13 /spl mu/m pseudomorphic transistors (0.135 /spl mu/m PHEMT) with low resistance, good reliability and an f/sub t/ of approximately 100 GHz. This circuit presents a 49 dB/spl Omega/ gain, low noise figure and wide bandwidth considering detector input capacitance in excess of 100 fF. An analysis involving noise, stability and the influence of bond-wire inductance on the overall circuit behaviour was performed. Input capacitance tolerance and output impedance matching conditions were evaluated. On-going on-wafer characterisation results are also presented and compared with simulation data, showing good agreement.
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